A new scaling theory for fully-depleted SOI double-gate MOSFET's: Including effective conducting path effect (ECPE)

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 317-322

  Chiang, T K ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); PERMITTIVITY; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY;

DEVICE PARAMETERS; DOUBLE GATES (DG); EFFECTIVE CONDUCTING PATH EFFECTS (ECPE); SCALING THEORY;

MOSFET DEVICES;

EID: 12344284236     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.10.008     Document Type: Article

References (13)

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