Comparison of the microstructures and ferroelectric characteristics of sputter deposited PZT films with and without lead or lead oxide for compensation

Ceramics International

Volumn 31, Issue 3, 2005, Pages 461-468

  Chang, W L ^a   He, J L ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

B. Microstructure; Ferroelectric characteristics; Lead compensation; PZT thin film

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; DYNAMIC RANDOM ACCESS STORAGE; FERROELECTRICITY; LEAD COMPOUNDS; MICROSTRUCTURE; PERMITTIVITY; SILICA; SPUTTER DEPOSITION; TRANSDUCERS;

FERROELECTRIC CHARACTERISTICS; LEAD COMPENSATION; PZT THIN FILMS;

FERROELECTRIC THIN FILMS;

EID: 12344279186     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2004.06.011     Document Type: Article

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