Preparation and electrical properties of rhombohedral Pb(ZrxTi1-x)O3 thin films by RF magnetron sputtering method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6807-6811

  Wang, Wensheng ^a   Fujii, Tadashi ^a   Karaki, Tomoaki ^a   Adachi, Masatoshi ^a  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

Fatigue; Multi target; Perovskite; Pyroelectric; PZT; Rhombohedral; Sputtering; Thin film

Indexed keywords

COERCIVE FORCE; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; PERMITTIVITY; PHASE TRANSITIONS; POLARIZATION; PYROELECTRICITY; REMANENCE; SUBSTRATES; TEMPERATURE; THIN FILMS;

LEAD ZIRCONATE TITANATE; PYROELECTRIC CURRENT; RHOMBOHEDRAL;

FERROELECTRIC MATERIALS;

EID: 0033320210     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6807     Document Type: Article

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