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Surface and Coatings Technology

Volumn 156, Issue 1-3, 2002, Pages 253-257

Effects of nitrogen and argon plasma-immersion ion implantation on silicon and its oxidation

(5) Rajkumer, R a Kumar, Mukesh b George, P J b Mukherjee, S c Chari, K S d

a Semiconductor Complex Ltd (India)

b KURUKSHETRA UNIVERSITY (India)

c INSTITUTE FOR PLASMA RESEARCH (India)

d CSAIL (India)

Author keywords

Oxidation rate; Oxy nitrides; Plasma immersion ion implantation (PIII); Refractive index; System on chip

Indexed keywords

ARGON; ELECTRIC PROPERTIES; ELLIPSOMETRY; ION IMPLANTATION; MOS DEVICES; NITROGEN; OXIDATION; REFRACTIVE INDEX;

PLASMA IMMERSION;

SILICON;

ION IMPLANTATION;

EID: 0036642207 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/S0257-8972(02)00102-0 Document Type: Article

Times cited : (16)

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