Effects of N distribution on charge trapping and TDDB characteristics of N2O annealed wet oxide

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 1121-1126

  Mazumder, Motaharul K ^a   Teramoto, Akinobu ^a   Komori, Junko ^a   Sekine, Masahiro ^a   Kawazu, Satoru ^a   Mashiko, Yoji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL REACTIONS; ELECTRON TRAPS; HOLE TRAPS; HYDROGEN; INTERFACES (MATERIALS); NITROGEN; NITROGEN COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SILICON; STRESSES; SUBSTRATES;

CURRENT STRESS; GATE DIELECTRICS; NITRIDATION; NITROGEN DISTRIBUTION; QUASI STATIC MEASUREMENTS; WET OXIDE THICKNESS DEPENDENCE; WET PYROGENIC OXIDE;

OXIDES;

EID: 0032637532     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.766873     Document Type: Article

References (20)