A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Volumn , Issue , 2004, Pages 111-114

  Voinigescu, S P ^a   Dickson, T O ^a   Beerkens, R ^b   Khalid, I ^b   Westergaard, P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (Canada)

Author keywords

Bicmos; CM; CMOS; Heterojunction bipolar transistor; Indium phosphide; Low noise amplifiers; Silicon germanium

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; CMOS INTEGRATED CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; SILICON; SPURIOUS SIGNAL NOISE;

BICMOS; CMOS; INDIUM-PHOSPHIDE; LOW NOISE AMPLIFIERS; SILICON GERMANIUM;

MILLIMETER WAVES;

EID: 12344255271     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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