SCOPUS 정보 검색 플랫폼

Volumn 59, Issue 6, 2005, Pages 615-617

Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes

(1) Lee, Yong Ju a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Atomic layer growth; Deposition; Electrode; Plasma; Thin films; Titanium nitride

Indexed keywords

CAPACITORS; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTROCHEMICAL ELECTRODES; IMPURITIES; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; PLASMAS; REACTION KINETICS; THIN FILM CIRCUITS; TITANIUM NITRIDE;

ATOMIC LAYER DEPOSITION; ATOMIC LAYER GROWTH; PLASMA TREATMENT; TETRAKIS(DIMETHYLAMIDO)TITANIUM;

TERNARY SYSTEMS;

EID: 12244268668 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2004.09.030 Document Type: Article

Times cited : (23)

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