Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2250-2253

  Smith, Kevin E ^a   Duda, Laurent C ^a   Stagarescu, Cristian B ^a,d   Downes, James ^a   Korakakis, Dimitris ^b   Singh, Raj ^b   Moustakas, Theodore D ^b   Guo, Jinghua ^c   Nordgren, Joseph ^c  

^a Boston University   (United States)

^b Boston University   (United States)

^c UPPSALA UNIVERSITY   (Sweden)

^d NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644256531     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (27)

1. Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors, Mater. Res. Soc. Symp. Proc., edited by C. H. Carter, Jr. (Materials Research Society, Pittsburgh, PA, 1994), Vol. 339.
2. S. S. Dhesi, C. B. Stagarescu, K. E. Smith, D. Doppalapudi, R. Singh, and T. D. Moustakas, Phys. Rev. B 56, 10271 (1997).
3. S. A. Ding, G. Neuhold, J. H. Weaver, P. Haberle, K. Horn, O. Brandt, H. Yang, and K. Ploog, J. Vac. Sci. Technol. A 14, 819 (1996).
4. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996).
5. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, W. R. L. Lambrecht, B. Segall, and H. Morkoc, J. Electron. Mater. 24, 225 (1995).
6. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. 65, 610 (1994).
7. J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 68, 2879 (1996).
8. V. M. Bermudez, T. M. Jung, K. Doverspike, and A. E. Wickenden, J. Appl. Phys. 79, 110 (1996).
9. V. M. Bermudez, R. Kaplan, M. A. Khan, and J. N. Kuznia, Phys. Rev. B 48, 2436 (1993).
10. V. M. Bermudez, Appl. Surf. Sci. 126, 69 (1998).
11. Angle Resolved Photoemission, edited by S. D. Kevan (Elsevier, Amsterdam, 1991).
12. K. E. Smith and S. D. Kevan, Solid State Chem. 21, 49 (1991).
13. L. G. Paratt, Rev. Mod. Phys. 31, 616 (1959).
14. C. B. Stagarescu, L.-C. Duda, K. E. Smith, J. H. Guo, J. Nordgren, R. Singh, and T. D. Moustakas, Phys. Rev. B 54, 17335 (1996).
15. Y.-N. Xu and W. Y. Ching, Phys. Rev. B 48, 4335 (1993).
16. T. Lei, M. Fanciulli, R. J. Molnar, T. D. Moustakas, R. J. Graham, and J. Scanlon, Appl. Phys. Lett. 59, 944 (1991).
17. J. Nordgren, G. Bray, S. Cramm, R. Nyholm, J.-E. Rubensson, and N. Wassdahl, Rev. Sci. Instrum. 60, 1690 (1989).
18. J. Nordgren and R. Nyholm, Nucl. Instrum. Methods Phys. Res. A 246, 242 (1986).
19. U. v. Barth and G. Grossmann, Phys. Rev. B 25, 5150 (1982).
20. J. Nordgren, J. Phys. (Paris) Colloq. 9, 693 (1987).
21. J. Nordgren and N. Wassdahl, Phys. Scr. T31, 103 (1989).
22. E. A. Albanesi, W. R. L. Lambrecht, and B. Segall, Phys. Rev. B 48, 17841 (1993).
23. M. R. H. Khan, Y. Koide, H. Itoh, N. Sawaki, and I. Akasaki, Solid State Commun. 60, 509 (1986).
24. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki, J. Appl. Phys. 61, 4540 (1987).
25. M. A. Kahn, R. A. Skogman, R. G. Schulze, and M. Gershenzon, Appl. Phys. Lett. 43, 492 (1983).
26. S. Yoshida, S. Misawa, and S. Gonda, J. Appl. Phys. 53, 6844 (1982).
27. D. K. Wickenden, C. B. Bargeron, W. A. Bryden, J. Miragliotta, and T. J. Kistenmacher, Appl. Phys. Lett. 65, 2024 (1994).