Investigation of 2D electron gas on AlGaN/GaN interface by electroreflectance

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 329-333

  Drabinska A ^a   Korona, K P ^a   Bozek, R ^a   Baranowski, J M ^a   Pakula K ^a   Tomaszewicz, T ^a   Gronkowski, J ^a  

^a UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CAPACITANCE; ELECTRIC FIELDS; ELECTRON GAS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MAPPING; NITRIDES; PHASE INTERFACES; POLARIZATION; SEMICONDUCTOR ALLOYS;

2-D ELECTRON GAS; ALGAN/GAN HETEROSTRUCTURES; CAPACITANCE-VOLTAGE PROFILING; ELECTRIC POLARIZATION; ELECTROREFLECTANCE; FRANZ-KELDYSH OSCILLATIONS; SPONTANEOUS POLARIZATIONS; WAVELENGTH MAPPING;

WIDE BAND GAP SEMICONDUCTORS;

EID: 20944432081     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390055     Document Type: Conference Paper

References (7)

1. F. Bernardini et al., Phys. Rev. B 56, R10024 (1997).
2. S. Nakamura et al., Appl. Phys. Lett. 72, 2014 (1998).
3. T. Tomaszewicz et al., Appl. Phys. Lett. 75, 2088 (1999).
4. A. Drabińska et al., phys. stat. sol. (b) 234, 868 (2002) (this conference).
5. D. E. Aspnes et al., Phys. Rev. B 7, 4605 (1973).
6. V. Fiorentini et al., Appl. Phys. Lett. 80, 1204 (2002).
7. O. Ambacher et al., J. Phys.: Condens. Matter 14, 3399 (2002).