MOCVD growth of transparent conducting Cd2SnO4 thin films

Chemical Vapor Deposition

Volumn 10, Issue 6, 2004, Pages 297-300

  Metz, Andrew W ^a   Lane, Melissa A ^b   Kannewurf, Carl R ^b   Poeppelmeier, Kenneth R ^a   Marks, Tobin J ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; FILM GROWTH; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARTIAL PRESSURE; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY; THIN FILMS; TIN;

CD2SNO4; INDIUM TIN OXIDE (ITO); ORGANIC LIGHT-EMITTING DIODES (OLED); TRANSPARENT CONDUCTING OXIDES (TCO);

CADMIUM COMPOUNDS;

EID: 11344285087     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200304177     Document Type: Article

References (58)

1. (a) H. Hosono, H. Ohta, M. Orita, K. Ueda, M. Hirano, Vacuum 2002, 66, 419.
2. (b) Special issue on "Transparent Conducting Oxides", MRS Bull. 2000, 25(8), 15.
3. (c) Y. Akao, T. Haranoh, Proc. 2nd Int. Conf. Coatings on Class; High-Performance Coatings for Transparent Systems in Large-Area and/or High-Volume Applications (Eds: H. K. Pulker, H. Schmidt, M. A. Ägerter), Elsevier Science, Amsterdam, The Netherlands 1999, p. 338.
4. (d) S. H. Keshmiri, M. M. B. Mohagheghi, S. O. Shir-Mard, M. R. Rokn-Abadi, Proc. 13th Int. Conf. Surface Modification Technologies (Eds: T. S. Sudarshan, K. Khor, M. Jeandin) ASM International, Materials Park. OH 1999, p. 253.
5. (e) M. Saif, H. Patel, H. Memarian, Proc. 10th Int. Conf. Vacuum Web Coating (Ed: R. Bakish), Bakish Materials Corp., Englewood, NJ 1996. p. 285.
6. C. G. Granqvist, A. Hultaker, Thin Solid Films 2002, 411, 1.
7. R. Bel Hadj Tahar, T. Ban, Y. Ohya, Y. Takahashi, J. Appl. Phys. 1998, 83, 2631.
8. A. Martel, F. Caballero-Briones, A. I. Oliva, R. Castro-Rodriguez, A Iribarren, P. Bartolo-Perez, J. L. Pena, Phys. Status Solidi B 2000, 220, 261.
9. (a) A. R. Schlatmann, D. W. Floet, A. Hilberer, F. Garten, J. M. Smulders, T. M. Klapwijk, G. Hadziioannou, Appl. Phys. Lett. 1996, 69, 1764.
10. (b) M. P. de Jong, L. J. van Ijzendoorn, M. J. A. de Voigt, Appl. Phys. Lett. 2000, 77, 2255.
11. W. L. Wang, K. J. Liao, C. Z. Cai, G. B. Liu, Y. Ma, Surf. Coat. Technol. 2003, 167, 284.
12. (a) S. B. Zhang, S.-H. Wei, Appl. Phys. Lett. 2002, 80, 1376.
13. (b) D. R. Kammler, T. O. Mason, K. R. Poeppelmeier, Chem. Maler. 2000, 12, 1954.
14. R. B. H. Tahar, T. Ban, Y. Ohya, Y. Takahashi, J. Am. Ceram. Soc. 2001, 84, 85.
15. T. J. Coutts, D. L. Young, X. Li, W. P. Mulligan, X. Wu, J. Vac. Sci. Technol., A 2000, 18, 2646.
16. T. J. Coutts, X. Wu, W. P. Mulligan, J. M. Webb, J. Electron. Mater. 1996, 25, 935.
17. X. Wu, W. P. Mulligan, T. J. Coutts, Thin Solid Films 1996, 286, 274.
18. (a) X. Wu, S. Asher, D. H. Levi, D. E. King, Y. Yan, T. A. Gessert, P. Sheldon, J. Appl. Phys. 2001, 89, 4564.
19. (b) X. Wu, R. G. Dhere, D. S. Albin, T. A. Gessert, C. DeHart, J. C. Keanc, A. Duda, T. J. Coutts, S. Asher, D. H. Levi, H. R. Moutinho, Y. Yan, T. Moriarty, S. Johnston, K. Emery, P. Sheldon, Proc.-NCPV Program Review Meeting 2001 (Eds: K. Ramanathan, S. Asher), National Technical Information Service, Springfield, VA 2001, p. 47.
20. (c) X. Wu, R. Ribelin, R. G. Dhere, D. S. Albin, T. A. Gessert, S. Asher, D. H. Levi, A. Mason, H. R. Moutinho, P. Sheldon, Conf. Rec. 28th IEEE Photovoltaic Spec. Conf., IEEE, Piscataway, NJ 2000, p. 470.
21. T. J. Coutts, X. Wu, P. Sheldon, D. H. Rose, National Renewable Energy Lab., Golden, CO, http://www.nrel.gov/ncpv/pdfs/coutts.pdf, 1998, p. 720.
22. X. Wu, T. J. Coutts, W. P. Mulligan, J. Vac. Sci. Technol., A 1997, 15, 1057.
23. T. J. Coutts, X. Wu, W. P. Mulligan, Mater. Res. Soc. Symp. Proc. 1996, 426, 479.
24. A. J. Nozik, Phys. Rev. B: Solid State 1972, 6, 453.
25. (a) M. Yan, M. Lane, C. R. Kannewurf, R. P. H. Chang, Appl. Phys. Lett. 2001, 78, 2342.
26. (b) J. M. McGraw, P. A. Parilla, D. L. Schulz, J. Alleman, X. Wu, W. P. Mulligan, D. S. Ginley, T. J. Coutts. Mater. Res. Soc. Symp. Proc. 1995, 388, 51.
27. C. Ronconi, O. L. Alves, Mol. Cryst. Liq. Cryst. 2002, 374, 275.
28. (a) G. Valincius, V. Reipa, V. Vilker, J. T. Woodward, M. Vaudin, J. Electrochem. Soc. 2001, 148, E341.
29. (b) H. Dislich, Vide, les Couches Minces 1985, 40, 261.
30. (a) K. L. Choy, Prog. Mater Sci. 2003, 48, 57.
31. (b) R. Waser, T. Schneller, S. Hoffmann-Eifert, P. Ehrhart, Integ. Ferroelectr. 2001, 36, 3.
32. (c) D. L. Schulz, T. J. Marks, in CVD of Nonmetals (Ed: W. S. Rees), VCH Publishers, New York 1996, Ch. 2.
33. (a) E. Y. Spiridonova, Gig. Tr. Prof. Zabol. 1991, 14.
34. (b) J. K. Dunnick, B. A. Fowler in Handbook on Toxicity of Inorganic Compounds (Eds: H. G. Seiler, H. Sigel, A. Sigel), Dekker, New York 1988, pp. 155-174.
35. A. D. Zorin, O. A. Emel'yanova, V. F. Zanozina, M. L. Markova, Y. N. Karataev, L. V. Stepanova, I. A. Feshchenko, Zh. Prikl. Spektrosk. 1989, 51, 903.
36. (a) J. R. Babcock, A. Wang, A. W. Metz, N. L. Edleman, M. V. Metz, M. A. Lane, C. R. Kannewurf, T. J. Marks, Chem. Vap. Deposition 2001, 7, 239.
37. (b) J. R. Babcock, A. Wang, N. L. Edleman, D. D. Benson, A. W. Metz, M. V. Metz, T. J. Marks, Mater. Res. Soc. Symp. Proc. 2000, 623, 317.
38. A. W. Metz, J. R. Ireland, J. Ni, K. R. Poeppelmeier, C. R. Kannewurf, T. J. Marks, Mater. Res. Soc. Symp. Proc. 2002, 721, 165.
39. (a) A. Gulino, P. Dapporto, P. Rossi, I. Fragalà, Chem. Mater. 2002, 14, 4955.
40. (b) A. Gulino, F. Castelli, P. Dapporto, P. Rossi, I. Fragalà, Chem. Mater. 2002, 14, 704.
41. (c) A. Gulino, P. Dapporto, P. Rossi, I. Fragala, Chem. Mater. 2002, 14, 1441.
42. (d) M. Afzaal, D. Crouch, M. A. Malik, M. Motevalli, P.O'Brien, J.-H. Park, J. D. Woolins, Eur. J. Inorg. Chem. 2004, 171.
43. (e) M. Afzaal, S. M. Aucott, D. Crouch, P. O'Brien, J. D. Woolins, J.-H. Park, Chem. Vap. Deposition 2002, 8, 187.
44. (a) M. E. Bowden, C. M. Cardile, Powder Diffr. 1990, 5, 36.
45. (b) L. A. Siegel, J. Appl. Crystallogr. 1978, 11, 284.
46. J. C. C. Fan, J. B. Goodenough, J. Appl. Phys. 1977, 48, 3524.
47. (a) N. Taga, H. Odaka, Y. Shigesato, I. Yasui, M. Kamei, T. E. Haynes, J. Appl. Phys. 1996, 80, 978.
48. (b) R. B. Dingle, Philos. Mag. 1955, 46, 831.
49. (c) C. Erginsoy, Phys. Rev. 1950, 79, 1013.
50. (d) G. Frank, H. Koestlin, Appl. Phys. A - Mater. Sci. Process 1982, A27, 197.
51. J. I. Pankove, Optical Processes in Semiconductors, Prentice-Hall, New York 1976, Ch. 3.
52. (a) I. Hamberg, C. G. Granqvist, J. Appl. Phys. 1986, 60, R123.
53. (b) A. Wang, J. R. Babcock, N. L. Edleman, A. W. Metz, M. A. Lane, R. Asahi, V. P. Dravid, C. R. Kannewurf, A. J. Freeman, T. J. Marks, Proc. Natt. Acad. Sci. USA 2001, 98, 7113.
54. B. G. Lewis, D. C. Paine, MRS Bull. 2000, 25, 22.
55. G. Haacke, W. E. Mealmaker, L. A. Siegel, Thin Solid Films 1978, 55, 67.
56. S. Sun, Z. Zhang. W.-K. Chu, D. M. Hoffman, Thin Solid Films 1999, 345, 240.
57. B. J. Hinds, R. J. McNeely, D. B. Studebaker, T. J. Marks, T. P. Hogan, J. L. Schindler, C. R. Kannewurf, X. F. Zhang, D. J. Miller, J. Mater. Res. 1997, 12, 1214.
58. J. W. Lyding, H. O. Marcy, T. J. Marks, C. R. Kannewurf, IEEE Trans. Instrum. Meas. 1988, 37, 76.