Improving floating-gate memory reliability by nanocrystal storage and pulsed tunnel programming

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 390-395

  Puzzilli, Giuseppina ^a   Caputo, Domenico ^a   Irrera, Fernanda ^a   Compagnoni, Christian Monzio ^b   Ielmini, Daniele ^b   Spinelli, Alessandro S ^c   Lacaita, Andrea L ^d   Gerardi, Cosimo ^e  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF INSUBRIA   (Italy)

^d IFN CNR   (Italy)

^e STMICROELECTRONICS   (Italy)

Author keywords

Leakage currents; Reliability; Semiconductor memories; Tunneling

Indexed keywords

CHARGE TRANSFER; ELECTRIC POTENTIAL; FLASH MEMORY; LEAKAGE CURRENTS; POLYSILICON; RELIABILITY; SEMICONDUCTING SILICON;

CELL OCCURENCES; DISCRETE STORAGE EFFECTS; MEMORY CELLS; SEMICONDUCTOR MEMORIES;

NANOTECHNOLOGY;

EID: 11144235804     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.837122     Document Type: Article

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