Pulsed Tunnel Programming of Nonvolatile Memories

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2474-2480

  Irrera, Fernanda ^a   Riccò, Bruno ^b  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Nonvolatile memories; Program time; Stress induced leakage current (SILC degradation); Tunnel programming

Indexed keywords

DATA STORAGE EQUIPMENT; DEGRADATION; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SUBSTRATES; THRESHOLD VOLTAGE;

NONVOLATILE MEMORIES; PULSED TUNNEL PROGRAMMING; VOLTAGE PULSES;

MICROELECTRONICS;

EID: 0346076864     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.820125     Document Type: Article

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