Time-dependent dielectric breakdown studies of PECVD H:SiCN and H:SiC thin films for copper metallization

Journal of the Electrochemical Society

Volumn 151, Issue 11, 2004, Pages

  Cui, Hao ^a   Burke, Peter A ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC FILMS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC INSULATORS; ELECTRON TRAPS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THERMODYNAMICS; THIN FILMS;

DIELECTRIC BREAKDOWN; HYDROGENATED SILICON CARBON NITRIDE; ION ACCUMULATIONS; METAL-INSULATOR-SEMICONDUCTORS (MIS);

METALLIZING;

EID: 10944241055     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1806397     Document Type: Article

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