Electrical and optical properties of rod-like defects in silicon

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4633-4635

  Goss, J P ^a   Briddon, P R ^a   Ebertein, T A G ^b   Jones, R ^b   Pinho, N ^b   Blumenau, A T ^c   Oberg S ^d  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c UNIVERSITY OF PADERBORN   (Germany)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; HIGH RESOLUTION ELECTRON MICROSCOPY; KINETIC THEORY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PROBABILITY DENSITY FUNCTION; SILICON; SPECTROSCOPIC ANALYSIS; TENSILE STRESS;

ATOMISTIC MODELING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); INTERSTITIAL ATOMS; ROOM TEMPERATURE (RT);

POINT DEFECTS;

EID: 10944229998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814425     Document Type: Article

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