Thermodynamic aspects of the Ga1-xInxN growth by MOCVD

Materials Letters

Volumn 35, Issue 1-2, 1998, Pages 85-89

  Leitner, Jindřich ^a   Stejskal, Josef ^a  

^a INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

Author keywords

Equilibrium calculations; Gallium indium nitride; MOCVD; Thermodynamic modeling

Indexed keywords

MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHASE EQUILIBRIA; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMICS;

NITRIDE SEMICONDUCTORS;

SEMICONDUCTING INTERMETALLICS;

EID: 0032050588     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(97)00225-5     Document Type: Article

References (31)

1. I. Akasaki, H. Amano, J. Cryst. Growth 146 (1995) 455.
2. T. Nagamoto, T. Kuboyama, H. Minamino, O. Omoto, Jpn. J. Appl. Phys. 28 (1989) 1334.
3. N. Yoshimoto, T. Matsuoka, T. Sasaki, A. Katsui, Appl. Phys. Lett. 59 (1991) 2251.
4. T. Matsuoka, N. Yoshimoto, T. Sasaki, A. Katsui, J. Electron. Mater. 21 (1992) 157.
5. S. Nakamura, T. Mukai, Jpn. J. Appl. Phys. 31 (1992) 1457.
6. S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 32 (1993).
7. M. Shimizu, K. Hiramatsu, N. Sawaki, J. Cryst. Growth 145 (1994) 209.
8. S. Yamasaki, S. Asami, N. Shibata, M. Koike, K. Manabe, T. Tanaka, H. Amano, I. Akasaki, Appl. Phys. Lett. 66 (1995) 1112.
9. F.G. McIntosh, K.S. Boutros, J.C. Roberts, S.M. Bedair, E.L. Piner, N.A. El-Masry, Appl. Phys. Lett. 68 (1996) 133.
10. G.B. Stringfellow, J. Cryst. Growth 62 (1983) 225.
11. H. Seki, A. Koukitu, J. Cryst. Growth 74 (1986) 172.
12. A. Koukitu, H. Seki, J. Cryst. Growth 76 (1986) 233.
13. A. Koukitu, N. Takahashi, T. Taki, H. Seki, Jpn. J. Appl. Phys. 35 (1996) L673.
14. P. Voňka, J. Leitner, CALPHAD 19 (1995) 25.
15. O. Knacke, O. Kubaschewski, K. Hesselmann, Thermochemical Properties of Inorganic Substances, 2nd ed., Springer, Berlin, 1991.
16. M. Tirtowidjojo, R. Pollard, J. Cryst. Growth 77 (1986) 200.
17. E.J. Abril, A. Alonso, M. López, M. Aguilar, Inst. Phys. Conf. Ser. 1993, vol. 129: GaAs and Related Compounds, 1992, p. 121.
18. V.P. Glushko et al., Termodinamicheskie Svoistva Individualnych Veschestv, Tom III., Nauka, Moscow, 1981.
19. A.T. Dinsdale, CALPHAD 15 (1991) 317.
20. J. Leitner, J. Stejskal, P. Vonka, Mater. Lett. 28 (1996) 197.
21. H. Hahn, R. Juza, Z. Anorg. Allg. Chem. 244 (1940) 111.
22. J.B. MacChesney, P.M. Bridenbaugh, P.B. O'Connor, Mater. Res. Bull. 5 (1970) 783.
23. A.M. Vorob'ev, G.V. Evseeva, L.V. Zenkevich, Zh. Fiz. Khim. 45 (1971) 2650.
24. A.M. Vorob'ev, G.V. Evseeva, L.V. Zenkevich, Zh. Fiz. Khim. 47 (1971) 2885.
25. S.P. Gordienko, B.V. Fenochka, Zh. Fiz. Khim. 51 (1977) 530.
26. R.D. Jones, K. Rose, J. Phys. Chem. Solids 48 (1987) 587.
27. O. Redlich, A.T. Kister, Ind. Eng. Chem. 40 (1948) 345.
28. T.J. Anderson, I. Ansara, J. Phase Equil. 12 (1991) 64.
29. J. Leitner, J. Phys. Chem. Solids, in print.
30. I. Ho, G.B. Stringfellow, Appl. Phys. Lett. 69 (1996) 2701.
31. C.B. Alcock, V.P. Itkin, M.K. Horrigan, Can. Metall. Q. 23 (1984) 309.