High-density plasma etching of low dielectric constant materials

Materials Research Society Symposium - Proceedings

Volumn 511, Issue , 1998, Pages 265-275

  Standaert, T E F M ^a   Matsuo, P J ^a   Allen, S D ^a   Oehrlein, G S ^a   Dalton, T J ^a   Lu, T M ^a   Gutmann, R ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; FLUOROCARBONS; INTEGRATED CIRCUIT MANUFACTURE; OXIDES; OXYGEN; PERMITTIVITY; PLASMA DENSITY; POLYMERS; SEMICONDUCTING GLASS; SURFACES; THIN FILMS;

AEROGEL; FLUORINATED OXIDE; HIGH DENSITY PLASMA ETCHING; HYDROGEN SILSESQUIOXANE; LOW DIELECTRIC CONSTANT; METHYL SILSESQUIOXANE; XEROGEL;

PLASMA ETCHING;

EID: 0032305401     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-511-265     Document Type: Conference Paper

References (9)