Effects of substrate temperature and annealing temperature on the formation and properties of erbium silicide layers synthesized by high current Er ion implantation

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 157-162

  Zhang, X W ^a,b   Wong, S P ^a   Cheung, W Y ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SPUTTERING; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

SURFACE FRACTALS;

ERBIUM COMPOUNDS;

EID: 0041340530     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1573346     Document Type: Article

References (23)

1. J. A. Knapp and S. T. Picraux, Appl. Phys. Lett. 48, 466 (1986).
2. F. Arnaud d'Avitaya, A. Perio, J.-C. Oberlin, Y. Campidelli, and J. A. Chroboczek, Appl. Phys. Lett. 54, 2198 (1989).
3. J. Y. Duboz, P. A. Badoz, F. Arnaud d'Avitaya, and J. A. Chorboczek, Appl. Phys. Lett. 55, 84 (1989).
4. G. Kaltsas, A. Travlos, N. Salamouras, A. G. Nassiopuolos, P. Revva, and A. Traverse, Thin Solid Films 275, 87 (1996).
5. I. Sagnes, G. Vincent, and P. A. Badoz, J. Appl. Phys. 72, 4295 (1992).
6. G. Chen, J. Wan, J. S. Yang, X. M. Ding, L. Ye, and X. Wang, Surf. Sci. 513, 203 (2002).
7. M. G. Grimaldi, X. S. Yan, G. Scerra, S. Ravesi, and C. Spinella, Appl. Phys. Lett. 67, 974 (1995).
8. M. F. Wu, A. Vantomme, H. Pattyn, and G. Langouche, Appl. Phys. Lett. 67, 3886 (1995).
9. S. M. Hogg, A. Vantomme, M. F. Wu, and G. Langouche, Microelectron. Eng. 50, 211 (2000).
10. X. W. Zhang, W. Y. Cheung, and S. P. Wong, Mater. Res. Soc. Symp. Proc. 647, O11.27(2001).
11. X. Q. Cheng and B. X. Liu, J. Alloys Compd. 336, 253 (2002).
12. I. G. Brown, J. E. Gavin, and R. A. MacGill, Appl. Phys. Lett. 47, 358 (1985).
13. Q. Peng, S. P. Wong, I. H. Wilson, N. Wang, and K. K. Fung, Thin Solid Films 270, 573 (1995).
14. H. N. Zhu, K. Y. Gao, and B. X. Liu, Phys. Rev. B 62, 1647 (2000).
15. X. W. Zhang, S. P. Wong, W. Y. Cheung, and F. Zhang, Appl. Phys. Lett. 80, 249 (2002).
16. I. G. Brown and X. Godechot, IEEE Trans. Plasma Sci. 19, 713 (1991).
17. R. D. Thompson and K. N. Tu, Thin Solid Films 93, 265 (1982).
18. F. Seitz and J. S. Koehler, Progress in Solid State Physics (Academic, New York, 1954), Vol. 2.
19. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 5, 344 (1985).
20. J. F. Ziegler, SRIM program (IBM Research, Yorktown, NY, 1996).
21. H. Y. Lee and H. Y. Chang, Philos. Mag. B 67, 97 (1993).
22. A. H. van Ommen, J. J. M. Otenheim, A. M. L. Theunissen, and A. G. Mouwen, Appl. Phys. Lett. 53, 669 (1988).
23. S. P. Wong, Q. Peng, W. Y. Cheung, R. Morton, and S. S. Lau, Semicond. Sci. Technol. 13, 895 (1998).