Characterisation of low energy antimony (2-5 keV) implantation into silicon

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 147-150

  Collart, Erik J H ^a   Kirkwood, David ^a   Vandervorst, Wilfried ^b   Brijs, Bert ^b   Van Den Berg, J A ^c   Werner, M ^c   Bailey, P ^d   Noakes, T C Q ^d  

^a Applied Materials UK Ltd   (United Kingdom)

^b IMEC   (Belgium)

^c UNIVERSITY OF SALFORD   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

Author keywords

Antimony; component: low energy ion implantation; MEIS; SIMS; USJ formation

Indexed keywords

ANTIMONY; ION BEAM LITHOGRAPHY; ION IMPLANTATION; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY;

DAMAGE DISTRIBUTION; ELECTRICAL SHEET RESISTANCE; LOW ENERGY ION IMPLANTATION; MEDIUM ENERGY ION SCATTERING; MEIS; ULTRA SHALLOW JUNCTION; USJ FORMATION;

IONS;

EID: 84961371792     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257960     Document Type: Conference Paper

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