Non-contact electrical measurements of sheet resistance and leakage current density for ultra-shallow (and other) junctions

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 475-480

  Faifer, Vladimir N ^a   Current, Michael I ^a   Walecki, Wojtek ^a   Souchkov, Vitali ^a   Mikhaylov, Georgy ^a   PhucVan, ^a   Wong, Tim ^a   Nguyen, Tan ^a   Lu, Jiansong ^a   Lau, S H ^a   Koo, Ann ^a  

^a Frontier Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DEPTH INDICATORS; ELECTRIC VARIABLES MEASUREMENT; LEAKAGE CURRENTS; LIGHT MODULATION; MAPPING; SILICON WAFERS; TRANSISTORS;

LEAKAGE CURRENT DENSITY; PHOTOGENERATION; SHEET RESISTANCE; ULTRA-SHALLOW JUNCTION (USJ);

SEMICONDUCTOR JUNCTIONS;

EID: 5544231425     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c11.9     Document Type: Conference Paper

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