Comparative growth kinetics of SiGe in a commercial reduced pressure chemical vapour deposition EPI reactor and anomalies during growth of thin Si layers on SiGe

Materials Research Society Symposium - Proceedings

Volumn 533, Issue , 1998, Pages 339-344

  Caymax, Matty ^a   Loo, Roger ^a   Brijs, Bert ^a   Vandervorst, Wilfried ^a   Howard, David J ^a   Kimura, Kenji ^a   Nakajima, Kaoru ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILANES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION (RPCVD);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032303268     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-533-339     Document Type: Conference Paper

References (7)