SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 297-301

Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth

(12) Pawlak, B J a Lindsay, R b Susdeanu, R a Dieu, B b Geenen, L b Hoflijk, I b Richard, O b Duffy, R a Clarysse, T b Brijs, B b Vandervorst, W b Dachs, C J J a

a PHILIPS RESEARCH LABORATORIES (Netherlands)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; CMOS INTEGRATED CIRCUITS; DIFFUSION; DISSOLUTION; PHASE TRANSITIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS; TRANSIENTS; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT ACTIVATION; ULTRASHALLOW JUNCTIONS;

EPITAXIAL GROWTH;

EID: 12144289854 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1643053 Document Type: Conference Paper

Times cited : (27)

References (12)

1
- 84961385346
- IEEE, New York
- B. J. Pawlak, R. Lindsay, R. Surdeanu, P. Stolk, K. Maex, and X. Pages, Ion Implantation Technology Conference Proceedings (IEEE, New York, 2002), p. 21.
- (2002) Ion Implantation Technology Conference Proceedings , pp. 21
- Pawlak, B.J.¹ Lindsay, R.² Surdeanu, R.³ Stolk, P.⁴ Maex, K.⁵ Pages, X.⁶

2
- 1642310744
- R. Surdeanu et al., ECS Conference Proceedings, 2002.
- (2002) ECS Conference Proceedings
- Surdeanu, R.¹

3
- 1642289515
- R. Lindsay, B. J. Pawlak, P. Stolk, and K. Maex, MRS Conference Proceedings, 2002.
- (2002) MRS Conference Proceedings
- Lindsay, R.¹ Pawlak, B.J.² Stolk, P.³ Maex, K.⁴

4
- 0036124718
- T. Clarysse, D. Vanhaeren, and W. Vandervorst, J. Vac. Sci. Technol. B 20, 459 (2002).
- (2002) J. Vac. Sci. Technol. B , vol.20 , pp. 459
- Clarysse, T.¹ Vanhaeren, D.² Vandervorst, W.³

5
- 0000370057
- C. Bonafos, A. Claverie, D. Alquier, C. Bergaud, A. Martinez, L. Laanab, and D. Mathiot, Appl. Phys. Lett. 71, 365 (1997).
- (1997) Appl. Phys. Lett. , vol.71 , pp. 365
- Bonafos, C.¹ Claverie, A.² Alquier, D.³ Bergaud, C.⁴ Martinez, A.⁵ Laanab, L.⁶ Mathiot, D.⁷

6
- 0032284232
- San Francisco
- T. Saito, J. Xia, R. Kim, T. Aoki, H. Kobayashi, Y. Kamakura, and K. Taniguchi, IEEE International Electron Devices Meeting, San Francisco, 1998, p. 497.
- (1998) IEEE International Electron Devices Meeting , pp. 497
- Saito, T.¹ Xia, J.² Kim, R.³ Aoki, T.⁴ Kobayashi, H.⁵ Kamakura, Y.⁶ Taniguchi, K.⁷

7
- 0038645959
- R. Duffy, V. Venezia, A. Heringa, T. Husken, M. Hopstaken, N. Cowern, P. Griffin, and C. C. Wang, Appl. Phys. Lett. 82, 3647 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3647
- Duffy, R.¹ Venezia, V.² Heringa, A.³ Husken, T.⁴ Hopstaken, M.⁵ Cowern, N.⁶ Griffin, P.⁷ Wang, C.C.⁸

8
- 0036607386
- S. Jain, W. Schoenmaker, R. Lindsay, P. Stolk, S. Decoutere, M. Willander, and H. Maes, J. Appl. Phys. 91, 8919 (2002).
- (2002) J. Appl. Phys. , vol.91 , pp. 8919
- Jain, S.¹ Schoenmaker, W.² Lindsay, R.³ Stolk, P.⁴ Decoutere, S.⁵ Willander, M.⁶ Maes, H.⁷

9
- 3342986580
- N. Cowern et al., Phys. Rev. Lett. 82, 4460 (1999).
- (1999) Phys. Rev. Lett. , vol.82 , pp. 4460
- Cowern, N.¹

10
- 0005346036
- P. Stolk et al., J. Appl. Phys. 81, 6031 (1997).
- (1997) J. Appl. Phys. , vol.81 , pp. 6031
- Stolk, P.¹

11
- 0001427722
- L. Robertson, M. Law, K. Jones, L. Rubin, J. Jackson, P. Chi, and D. Simsons, Appl. Phys. Lett. 75, 3844 (1999).
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3844
- Robertson, L.¹ Law, M.² Jones, K.³ Rubin, L.⁴ Jackson, J.⁵ Chi, P.⁶ Simsons, D.⁷

12
- 0014553646
- G. Vick and K. Whittle, J. Electrochem. Soc. 116, 1142 (1969).
- (1969) J. Electrochem. Soc. , vol.116 , pp. 1142
- Vick, G.¹ Whittle, K.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.