Growth of SiC nanostructures on Si (100) using low energy carbon ion implantation and electron beam rapid thermal annealing

International Journal of Nanoscience

Volumn 3, Issue 4-5, 2004, Pages 425-430

  Markwitz, A ^a   Johnson, S ^b   Rudolphi, M ^c   Baumann, H ^c  

^a GNS SCIENCE   (New Zealand)

^b VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

Electron beam annealing; Ion implantation; Nanostructures; SiC; SiC on Si

Indexed keywords

CARBON; CRYSTAL GROWTH; ELECTRON BEAMS; ION IMPLANTATION; RAPID THERMAL ANNEALING; SILICON CARBIDE;

ELECTRON BEAM ANNEALING; ELECTRON BEAM RAPID THERMAL ANNEALING (EB-RTA); LOW ENERGY ION IMPLANTATION (LEII); SIC ON SI;

NANOSTRUCTURED MATERIALS;

EID: 10644227765     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0219581x04002218     Document Type: Article

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