Overstoichiometric Low-Energy Nitrogen Implantations into Silicon - Formation of Gas Nanobubbles vs. Silicon Nanowhiskers

Journal of Nanoscience and Nanotechnology

Volumn 1, Issue 4, 2001, Pages 393-396

  Markwitz, Andreas ^a  

^a GNS SCIENCE   (New Zealand)

Author keywords

Nanobubbles; Nitrogen Implantation; Silicon; Silicon Nanowhiskers

Indexed keywords

ION; MICROSPHERE; NITROGEN; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; CRYSTALLIZATION; ELECTRON; GAS; ISOLATION AND PURIFICATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; SYNTHESIS;

CRYSTALLIZATION; ELECTRONS; GASES; IONS; MICROSCOPY, ATOMIC FORCE; MICROSPHERES; NANOTECHNOLOGY; NITROGEN; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 0038129262     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

1. N. Ozaki, Y. Ohno, and S. Takeda, Appl. Phys. Lett. 73, 3700 (1998).
2. S. Volz and G. Chen, Appl. Phys. Lett. 75, 2056 (1999).
3. J. T. Hu, T. W. Odom, and C. M. Lieber, Acc. Chem. Res. 32, 435 (1999).
4. D. M. Pooley, H. Ahmed, H. Mizuta, and K. Nakazato, Appl. Phys. Lett. 74, 2191 (1999).
5. W. S. Shi, H. Y. Peng, Y. F. Zheng, N. Wang, N. G. Shang, Z. W. Pan, C. S. Lee, and S. T. Lee, Adv. Mater. 12, 1343 (2000).
6. J. L. Gole, J. D. Stout, W. L. Rauch, and Z. L. Wang, Appl. Phys. Lett. 76, 2346 (2000).
7. U. Landman, R. N. Barnett, A. G. Scherbakov, and P. Avouris, Phys. Rev. Lett. 85, 1958 (2000).
8. F. J. Himpsel, A. Kirakosian, J. N. Lin, and D. Y. Petrvykh, Solid State Commun. 117, 149 (2001).
9. L. Canham and V. Crespi, Nature 409, 974 (2001).
10. A. Markwitz, W. Grill, H. Baumann, E. F. Krimmel, and K. Bethge, Appl. Phys. Lett. 64, 2652 (1994).
11. A. Markwitz, H. Baumann, W. Grill, B. Heinz, A. Röseler, E. F. Krimmel, and K. Bethge, Fresenius J. Anal. Chem. 353, 734 (1995).
12. A. Markwitz, H. Baumann, and E. F. Krimmel, Physica E 11, 110 (2001).
13. "Microscopic Silicon Pillars", UK Patent Application, No. 9813267.3, 20/06/98, The School of Physics and Astronomy, The Nanoscale Physics Research Laboratory.
14. C. Maurer, R. Kallweit, H. Baumann, E. F. Krimmel, and K. Bethge, Nucl. Instrum. Methods B 80/81, 564 (1993).
15. A. Markwitz, H. Baumann, W. Grill, A. Knop, E. F. Krimmel, and K. Bethge, Nucl. Instrum. Methods B 89, 362 (1993).
16. A. Markwitz, H. Baumann, E. F. Krimmel, R. W. Michelmann, C. Maurer, E. C. Paloura, A. Knop, and K. Bethge, Appl. Phys. A 59, 435 (1994).
17. J. Bourgoin, Point Defects in Semiconductors 2, Springer Ser. Solid State Sci., Vol 35, Springer-Verlag, Berlin/Heidelberg (1983).