Phase formations and electrical properties of Bi3.15La 0.85Ti3O12 and Sm-doped Bi 3.073La0.85Sm0.077Ti3O12 thin films with annealing temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 B, 2004, Pages 6594-6598

  Ryu, Sang Ouk ^a   Lee, Nam Yeal ^a   Lee, Won Jae ^b   Yoon, Soon Gil ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Dong Eui University   (South Korea)

^c Chungnam National University   (South Korea)

Author keywords

(Bi,La)4Ti3O12; Ferroelectrics; Leakage current; Remanent polarization; Sm doping

Indexed keywords

CURRENT DENSITY; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; MICROSTRUCTURE; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

(BI,LA)4TI3O12; REMANENT POLARIZATION; SM-DOPING;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 10444283408     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6594     Document Type: Conference Paper

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