Excess Bismuth-dependent characteristics of chemical solution deposited Bi 3.15la 0.85Ti 3O 12 thin films

Integrated Ferroelectrics

Volumn 52, Issue , 2003, Pages 171-178

  Lee, Nam Yeal ^a   Lee, Won Jae ^b   Ryu, Sang Ouk ^a   You, In Kyu ^a   Yoon, Sung Min ^a   Cho, Seong Mok ^a   Shin, Woong Chul ^a   Yu, Byoung Gon ^a   Kim, Jindong ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Dong Eui University   (South Korea)

^c Kim Semiconductor Materials Research Center DNF Co   (South Korea)

Author keywords

BLT; Crystallographic orientation; Excess Bi content; Ferroelectric hysteresis

Indexed keywords

BLT; CHEMICAL SOLUTION DEPOSITION; EXCESS BI CONTENT; FERROELECTRIC HYSTERESIS;

BISMUTH COMPOUNDS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; HYSTERESIS; RAPID THERMAL ANNEALING; SOLUTIONS;

FERROELECTRIC THIN FILMS;

EID: 10444268412     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580390254501     Document Type: Article

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