Raman investigation of stress and phase transformation induced in silicon by indentation at high temperatures

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 279-283

  Kouteva Arguirova, S ^a   Orlov, V ^a,b   Seifert, W ^a,c   Reif, J ^a   Richter, H ^a,c  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; CRYSTALLOGRAPHY; INDENTATION; INTERNAL FRICTION; MATHEMATICAL MODELS; MORPHOLOGY; PHASE TRANSITIONS; PRESSURE EFFECTS; RAMAN SCATTERING; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; STRESS RELAXATION; STRESSES; TENSILE STRESS;

ANELASTICITY; CRYSTALLOGRAPHIC ASPECTS OF PHASE TRANSFORMATIONS; ELEMENTAL SEMICONDUCTORS AND INSULATORS; MECHANICAL RESONANCES;

SILICON WAFERS;

EID: 10244249095     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004144     Document Type: Conference Paper

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