Mechanical properties of nitrogen-doped CZ silicon crystals

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 403-407

  Orlov, V ^a,b   Richter, H ^b,c   Fischer, A ^c   Reif, J ^b   Muller T ^d   Wahlich, R ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c IHP   (Germany)

^d SILTRONIC AG   (Germany)

Author keywords

Large wafer diameter; Nitrogen doping; Silicon; Upper yield stress

Indexed keywords

BEARING CAPACITY; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; HEAT TREATMENT; LEAKAGE CURRENTS; NITROGEN; PLASTICITY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL STRESS; YIELD STRESS;

NITROGEN DOPING;

SILICON WAFERS;

EID: 0036966307     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00121-X     Document Type: Conference Paper

References (21)

1. Fukuda T. Jpn J Appl Phys. 35:1996;3799.
2. Müller T., Siebert W., Messmann K., Wahlich R., Krottenthaler P., Hölzl R., Ikari A., Ammon W.V. Electrochem Soc Proc. 2002-2:2002;194.
3. Alexander H., Haasen P. Solid State Phys. 22:1968;27.
4. Sumino K., Yonenaga I. Solid State Phenomena. 85-86:2002;145.
5. Alexander H. In: Nabarro FR, editor. Dislocation in solids, vol. 7. Amsterdam: North-Holland, 1986. p. 113.
6. Vanhellemont J., Claeys C. J Electrochem Soc. 135:1988;1509.
7. Ikari A., Nakai K., Tachikawa Y., Deai H., Hideki Y., Ohta Y., Masahashi N., Hayashi S., Hoshino T., Ohashi W. Solid State Phenomena. 67-70:1999;161.
8. Ohashi W, Ikari A, Ohta Y, Yokota H, Tachikawa A, Ishizaka K, Deai H, Futagi T, Takahashi J, Inoue Y, Nakai K. KAZUSA Academia Forum, 1999.
9. Nakai K., Inoue Y., Yokot H., Ikari A., Takahashi J., Tachikawa A., Kitahara K., Ohta Y., Ohashi W. J Appl Phys. 89(8):2001;4301.
10. Akhmetov V.D., Richter H., Lysytskiy O., Wahlich R., Müller T. Oxide precipitates in annealed nitrogen-doped 300. mm CZ-SI Materials Science in Semiconductor Processing. 5(4-5):2003;391-396.
11. Abe T, Kikuchi K, Shirai S, Muraoka S. Semiconductor silicon 1981, Electrochem Soc Proceedings, vol. 54.
12. Sumino K., Yonenaga I., Imai M. J Appl Phys. 54:1983;5016.
13. Li D., Yang D., Que D. Physica B. 273-274:1999;553.
14. Akatsuka M., Sueoka K. Jpn J Appl Phys. 40:2001;1240.
15. Mejennyi M, Mil'vidskii M, Reznik B, Fiz Tverd Tela 2002;44:1224 (in Russia).
16. Petukhov B. Semiconductors. 36:2002;121.
17. Fischer A., Richter H., Kürner W., Kücher J. Appl Phys. 87:2000;1543.
18. Fischer A, Grabolla Th, Richter H, Obermeier G, Krottenthaler P, Wahlich R. Microelectrical Engineering 45 (1999) 209; E-MRS Strasbourg. In: Fußstetter H, Richter H, Umeno M, editors. Proceedings, vol. 100. Sub-Quarter-Micron Silicon Issues in the 200/300 mm Conversion Era, 2001. p. 117.
19. Fischer A, Grabolla Th, Richter H, Obermeier G, Krottenthaler P, Wahlich R. Microelectrical Engineering 45 (1999) 209; E-MRS Strasbourg. In: Fußstetter H, Richter H, Umeno M, editors. Proceedings, vol. 100. Sub-Quarter-Micron Silicon Issues in the 200/300 mm Conversion Era, 2001. p. 117.
20. Farber B., Orlov V., Nikitenko V., Heuer A. Philos Magn A. 78:1998;671.
21. Kailer A., Gogotsi Y.G., Nickel K.G. J Appl Phys. 81:1997;3057.