Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

Thin Solid Films

Volumn 469-470, Issue SPEC. ISS., 2004, Pages 393-397

  Wang, J H ^a   Liu, P T ^b   Chang, T S ^a   Chang, T C ^b,c   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Copper suicide; Dielectric constant; Porous polysilazane

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CATALYSIS; CHEMICAL MECHANICAL POLISHING; COPPER COMPOUNDS; DESORPTION; LEAKAGE CURRENTS; MASS SPECTROMETRY; METALLIZING; MIS DEVICES; OXIDATION; PERMITTIVITY; POROSITY; POROUS MATERIALS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

COPPER SILICIDE; HYDROGEN SILSESQUIOXANE (HSQ) FILMS; POROUS POLYSILAZANE (PPSZ) FILMS; THERMAL DESORPTION MASS SPECTROSCOPY (TDS);

SILICON COMPOUNDS;

EID: 10044288327     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.09.014     Document Type: Article

References (20)

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry, San Jose, CA, 1997.
2. B.J. Bauer, E.K. Lin, H.J. Lee, H. Wang, W.L. Wu, J. Electron. Mater. 30 (2001) 304.
3. M. Morgen, E.T. Ryan, J.H. Zhao, C. Hu, T. Cho, P.S. Ho, Annu. Rev. Mater. Sci. 30 (2000) 645.
4. H.J. Lee, E.K. Lin, H. Wang, W.L. Wu, W. Chen, E.S. Moyer, Chem. Mater. 14 (2002) 1845.
5. S. Yang, P.A. Mirau, C.S. Pai, O. Nalamasu, E. Reichmanis, J.C. Pai, Y.S. Obeng, J. Seputro, E.K. Lin, H.J. Lee, J. Sun, D.W. Gidley, Chem. Mater. 14 (2002) 369.
6. K. Muraoka, Appl. Phys. Lett. 80 (2002) 4516.
7. C.Y. Wang, Z.X. Shen, J.Z. Zheng, Appl. Spectrosc. 54 (2000) 209.
8. C.Y. Wang, Z.X. Shen, J.Z. Zheng, Appl. Spectrosc. 55 (2001) 1347.
9. A.T. Kohl, R. Mimna, R. Shick, L. Rhodes, Z.L. Wang, P.A. Kohl, Electrochem. Solid-State Lett. 2 (1999) 77.
10. A.M. Padovani, L. Rhodes, S.A.B. Allen, P.A. Kohl, J. Electrochem. Soc. 149 (2002) F161.
11. J.H. Wang, W.J. Chen, T.C. Chang, P.T. Liu, S.L. Cheng, J.Y. Lin, L.J. Chen, J. Electrochem. Soc. 150 (2003) F141.
12. R. Tromp, G.W. Rubloff, P. Balk, F.K. LeGoues, Phys. Rev. Lett. 55 (1985) 2332.
13. K.E. Johnson, T. Engel, Phys. Rev. Lett. 69 (1992) 339.
14. H. Watanabe, K. Fujita, M. Ichikawa, Appl. Phys. Lett. 70 (1997) 1095.
15. H.Y. Huang, L.J. Chen, J. Appl. Phys. 88 (2000) 1412.
16. W.S. Shi, H.Y. Peng, Y.F. Zheng, N. Wang, N.F. Shang, Z.W. Pan, C.S. Lee, S.T. Lee, Adv. Mater. 12 (2000) 1343.
17. C.S. Liu, L.J. Chen, J. Appl. Phys. 74 (1993) 3611.
18. C.S. Liu, L.J. Chen, J. Appl. Phys. 74 (1993) 5507.
19. C.S. Liu, L.J. Chen, J. Appl. Phys. 75 (1994) 2730.
20. J.H. Wang, L.J. Chen, Z.C. Lu, C.S. Hsiung, W.Y. Hsieh, T.R. Yew, J. Vac. Sci. Technol., B 20 (2002) 1522.