Ohmic contacts to n-type GaSb and n-type GaInAsSb

Journal of Electronic Materials

Volumn 33, Issue 11, 2004, Pages 1406-1410

  Huang, Robin K ^a   Wang, Christine A ^a   Harris, Christopher T ^a   Connors, Michael K ^a   Shiau, Daniel A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

GaInAsSb; GaSb; Ohmic contacts; TLM

Indexed keywords

ARSENIC; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRONS; ETCHING; INDIUM; METALLIZING; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

GAINASSB; GASB; THERMOPHOTOVOLTAIC (TPV); TRANSFER LENGTH METHOD (TLM);

OHMIC CONTACTS;

EID: 10044276894     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0171-1     Document Type: Conference Paper

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