Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of sub-micron contacts

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 625-629

  Sigmund, J ^a   Saglam, M ^a   Vogt, A ^a   Hartnagel, H L ^a   Buschmann, V ^a   Wieder, T ^a   Fuess, H ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

A1. Diffusion; A1. Nanostructures; A3. Molecular beam epitaxy; B1. Antimonides

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; INTERDIFFUSION (SOLIDS); METALLIZING; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENT X RAY DIFFRACTION (GIXD);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035399116     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00785-0     Document Type: Conference Paper

References (10)