Ohmic contact formation mechanism of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7715-7719

  Vogt, A ^a   Simon, A ^a   Hartnagel, H L ^a   Schikora, J ^a   Buschmann, V ^a   Rodewald, M ^a   Fuess, H ^a   Fascko, S ^b   Koerdt, C ^b   Kurz, H ^b  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001391435     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367943     Document Type: Article

References (17)

1. E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, Appl. Phys. Lett. 58, 2291 (1991).
2. C. L. Felix, J. R. Meyer, I. Vurgaftman, C.-H. Lin, S. J. Murray, D. Zhang, and S.-S. Pei, IEEE Photonics Technol. Lett. 9, 734 (1997).
3. Ch. Heinz, Int. J. Electron. 54, 247 (1982).
4. E. Villemain, M. Rolland, S. Gaillard, and A. Joullie, Mater. Sci. Eng., B 20, 162 (1993).
5. A. A. Godoy van Zuben, M. B. Z. Morosini, J. L. Herrera-Perez, and N. B. Patel, in 5th Brazilian School. Semiconductor Physics (World Scientific, Singapore, 1992), p. 400.
6. A. M. Oyama, R. de Oliveira, P. S. Pizani, J. C. Galzerani, L. P. Cardoso, S. L. Morelhao, and R. Landers, in Ref. 5, p. 385.
7. J. B. B. Olveira, C. A. Olveiri, J. C. Galzerani, A. A. Pasa, and F. C. de Prince, J. Appl. Phys. 66, 5484 (1989).
8. L. Gouskov, A. Gouskov, M. Perotin, M. Valenza, D. Rigaud, A. Sabir, and H. Archidi, J. Phys. III 1, 552 (1991).
9. M. Rolland, S. Gaillard, E. Villemain, D. Rigaud, and M. Valenza, J. Phys. III 3, 1825 (1993).
10. A. Vogt, H. L. Hartnagel, G. Miene, H. Fuess, and J. Schmitz, J. Vac. Sci. Technol. B 14, 3514 (1996).
11. A. Subetki, V. W. L. Chin, and T. L. Tansley, Solid-State Electron. 39, 329 (1996).
12. T. C. Shen, G. B. Gao, and H. Morkoç, J. Vac. Sci. Technol. B 10, 2113 (1992).
13. A. Piotrowska, E. Kaminska, T. Piotrowski, S. Kasjaniuk, M. Gierlotka, X. W. Lin, Z. Liliental-Weber, J. Washburn, and S. Kwiatkowski, Acta Physica Pol. A 87, 419 (1995).
14. B. Tadayon, C. S. Kyono, M. Fatemi, S. Tadayon, and J. A. Mittereder, J. Vac. Sci. Technol. B 13, 1 (1995).
15. C. L. Chen, L. J. Mahoney, M. C. Finn, R. C. Brooks, A. Chu, and J. G. Mavroides, Appl. Phys. Lett. 48, 535 (1986).
16. L. J. Brillson, Contacts to Semiconductors (Noyes, Park Ridge, 1993).
17. M. Kodama, J. Hasegawa, and M. Kimata, J. Electrochem. Soc. 132, 659 (1985).