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Volumn 163, Issue 2, 1997, Pages 387-393
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Pd-based ohmic contacts to n-GaSb
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CURRENT VOLTAGE CHARACTERISTICS;
DEPOSITION;
ELECTRON BEAMS;
EVAPORATION;
HETEROJUNCTIONS;
HIGH TEMPERATURE EFFECTS;
PALLADIUM;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DIODES;
THERMODYNAMIC PROPERTIES;
ELECTRON BEAM EVAPORATION;
OHMIC CONTACTS;
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EID: 0031249942
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(199710)163:2<387::AID-PSSA387>3.0.CO;2-6 Document Type: Article |
Times cited : (12)
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References (13)
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