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Journal of the Electrochemical Society

Volumn 149, Issue 7, 2002, Pages

Common n- and p-contact for serial wiring of quaternary antimonide monolithic interconnected module thermmophotovoltaic devices

(6) Peake, G M a Cederberg, J G c Hafich, M J c Kurtz, S R c Biefeld, R M c Palmasiano, M N b

a SANDIA NATIONAL LABORATORIES (United States)

b BECHTEL BETTIS INC (United States)

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC RESISTANCE; ELECTRIC WIRING; METALLIZING; SEMICONDUCTOR DIODES;

THERMOPHOTOVOLTAIC DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 0036642342 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1482058 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.