Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxy

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 199-202

  Vogt, A ^a   Simon, A ^a   Weber, J ^a   Hartnagel, H L ^a   Schikora, J ^a   Buschmann, V ^a   Fuess, H ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; GOLD; MOLECULAR BEAM EPITAXY; NICKEL; PALLADIUM; PLATINUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY; TITANIUM;

GALLIUM ANTIMONIDE;

OHMIC CONTACTS;

EID: 0033284610     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00098-7     Document Type: Article

References (11)

1. Felix C.L., Meyer J.R., Vurguftman I., Lin C.-H., Murray S.J., Zhang D., Pei S.S. High-temperature 4.5-μm type-II quantum-well laser with auger suppression. IEEE Photon. Technol. Lett. 9(6):1997;734-736.
2. Brown E.R., Söderström J.R., Parker C.D., Mahoney L.J., Molvar K.M., McGill T.C. Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes. Appl. Phys. Lett. 58(20):1991;2291-2293.
3. Heinz Ch. Ohmic contacts to p- and n-type GaSb. Int. J. Electronics. 54(2):1982;247-254.
4. Oliveira J.B.B., Oliveira C.A., Galzerani J.C., Pasa A.A., de Prince F.C. Properties of Au-Zn ohmic contacts to p-GaSb. J. Appl. Phys. 66(11):1989;5484-5487.
5. Gouskov L., Gouskov A., Perotin M., Valenza M., Rigaud D., Sabir A., Archidi H. Résistance et bruit de contacts d'or évaporé et pulverisé sur GaSb de type p. J. Phys. III France. 1(4):1991;552-556.
6. Oyama A.M., de Oliveira R., Pizani P.S., Galzerani J.C., Cardoso L.P., Morelhao S.L., Landers R. Au-Zn ohmic contact to p-GaSb: electrical and structural properties of the interface. 5th Brazilian School Semiconductor Physics. 1992;385-389.
7. Rolland M., Gaillard S., Villemain E., Rigaud D., Valenza M. Low noise ohmic contacts on n and p type GaSb. J. Phys. III France. 3(9):1993;1825-1832.
8. Villemain E., Gaillard S., Rolland M., Joullie A. Characterization of ohmic contacts on n- and p-type GaSb. Mat. Sci. Eng. B. 20:1993;162-164.
9. Piotrowska A., Kaminska E., Piotrowski T., Kasjaniuk S., Gierlotka M., Lin X.W., Liliental-Weber Z., Washburn J., Kwiatkowski S. Interaction of Au with GaSb and its impact on the formation of ohmic contacts. Acta Phys. Polonica A. 87(2):1995;419-422.
10. Vogt A., Hartnagel H.L., Miehe G., Fuess H., Schmitz J. Electrical and microstructure analysis of ohmic contacts to p- and n-type GaSb, grown by molecular beam epitaxy. J. Vac. Sci. Technol. B. 14(6):1996;3514-3519.
11. Tadayon B., Kyono C.S., Fatemi M., Tadayon S., Mittereder J.A. Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy. J. Vac. Sci. Technol. B. 13(1):1995;1-3.