Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1627-1631

  Ikossi, K ^a   Goldenberg, M ^a   Mittereder, J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

MBE; n type GaSb; Ohmic contacts; Pd; TLM

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; METALLIZING; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

CONTACT RESISTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036779154     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00116-8     Document Type: Conference Paper

References (4)

1. The physics and technology of gallium antimonide: An emerging optoelectronic material
2. GaAsSb for heterojunction bipolar transistors
3. Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
4. Stable and shallow Pd/In ohmic contacts to n-GaAs