Grain boundary structures in zinc oxide varistors

Acta Materialia

Volumn 53, Issue 2, 2005, Pages 237-245

  Leach, C ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

EBIC; Electroceramics; Electron backscattering patterns; Interfaces; Zinc oxide

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DOPING (ADDITIVES); ELECTRON BEAMS; SCANNING ELECTRON MICROSCOPY; VARISTORS; ZINC OXIDE;

EBIC; ELECTROCERAMICS; ELECTRON BACKSCATTERING PATTERNS; ELECTRON BEAM INDUCED CURRENT (EBIC);

GRAIN BOUNDARIES;

EID: 10044264137     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2004.07.006     Document Type: Article

References (35)

1. Matsuoka M. Non-ohmic properties of zinc oxide ceramics. Jpn J Appl Phys 1971;10:736-46.
2. Mahan GD, Levinson LM, Philipp HR. Theory of conduction in ZnO varistors. J Appl Phys 1979;50:2799-812.
3. Gupta TK. Microstructural engineering through donor and acceptor doping in the grain and grain boundary of a polycrystalline semiconducting ceramic. J Mater Res 1992;7:3280-95.
4. Gupta TK. Applications of zinc oxide varistors. J Am Ceram Soc 1990;73:1817-40.
5. Clarke DR. Varistor ceramics. J Am Ceram Soc 1999;82: 485-502.
6. Olsson E, Dunlop GL. Characterisation of individual interfacial barriers in a ZnO varistor material. J Appl Phys 1989;66:3666-75.
7. Tao M, Bui A, Dorlanne O, Loubiere A. Different 'single grain junctions' within a ZnO varistor. J Appl Phys 1987;61:1562-7.
8. Cao ZC, Wu RJ, Song RS. Ineffective grain boundaries and breakdown threshold of zinc oxide varistors. Mater Sci Eng B 1994;22:261-6.
9. Tanaka S, Takahashi K. Voltage-current characteristics of single grain boundary of zinc oxide varistors and the effects of additives. Key Eng Mater 1999;157-158:241-8.
10. Ernst F, Kienzle O, Rühle M. Structure and composition of grain boundaries in ceramics. J Europ Ceram Soc 1999;19:665-73.
11. Greuter F, Blatter G. Electrical properties of grain boundaries in polycrystalline compound semiconductors. Semicond Sci Tech 1990;5:111-37.
12. Bubalek LO, Tennent WE. Observation of charge separating defects in HgCdTe using remote contact electron beam induced current. Appl Phys Lett 1988;52:1255-7.
13. Holt DB. Local grain boundary property measurements. In: Strunk HP, Werner JH, Fortin B, Bonnaud O, editors. 'Polycrystalline semiconductors III - physics and technology' solid state phenomena Trans Tech Zurich, vol. 37-38; 1994. p. 17182.
14. Mataré HF, Laaksoo CW. Space-charge domains at dislocation sites. J Appl Phys 1969;40:476-82.
15. Russell GJ, Robertson MJ, Vincent B, Woods J. An electron beam induced current study of grain boundaries in zinc selenide. J Mater Sei 1980; 15:939-4.
16. Palm J, Alexander H. Direct measurement of the local diffusion length of grain boundaries by EBIC without a Schottky contact. J Phys IV, Colloq C6, Supplement to J Phys III 1991;l:101-6.
17. Russell JD, Halls DC, Leach C. Direct observation of grain boundary Schottky barrier behaviour in zinc oxide varistor aterial. J Mater Sci (Lett) 1995; 14:676-8.
18. Van Kemenade JTC, Eijenthoven RK. Direct determination of barrier voltage in ZnO varistors. J Appl Phys 1979;50:938-41.
19. Gaevski M, Elfwing M, Olsson E. Three-dimensional investigations of electrical barriers using electron beam induced current measurements. J Appl Phys 2002;91:2713-24.
20. Leach C. The effect of voltage bias on the EBIC contrast present at varistor grain boundaries. Int Sci 2000;8:375-88.
21. Russell JD, Halls DC, Leach C. Grain boundary SEM conductive mode contrast effects in additive free zinc oxide. Acta Mater 1996;44:2431-6.
22. Holt DB. The remote electron team-induced current analysis of grain boundaries in semiconducting and semi-insulating materials. Scanning 2000;22:272-82.
23. Holt DB, Raza B, Wojcik A. EBIC studies of grain boundaries. Mater Sci Eng B 1996;42:14-23.
24. Russell JD, Halls DC, Leach C. The relationship between crystal misorientation and conductive mode contrast of grain boundaries in additive free zinc oxide. J Mater Sci 1997;32: 4585-9.
25. 3. J Mater Sci (Lett) 1995;14:537-8.
26. Hayashi K, Yamamoto T, Sakuma T. Grain orientation dependence of the PTCR effect in niobium-doped Barium Titanate. J Am Ceram Soc 1996;79:1669-72.
27. Poullain G, Mercey B, Nouet G. Conductance of silicon grain boundaries in as-grown and annealed bicrystals. J Appl Phys 1987;61:1547-52.
28. Grimmer H. Systematic determination of coincidence orientations for all hexagonal lattices with axial ratio c/a in a given interval. Acta Crystallogr 1989;A45:320-5.
29. Saylor DM, Morawiec A, Rohrer GS. Distribution of grain boundaries in magnesia as a function of five macroscopic parameters. Acta Mater 2003;51:3663-74.
30. Leach C. SEM based estimation of the grain boundary plane orientation in zinc oxide varistors using conductive mode microscopy. Scripta Mater 2000;43:529-34.
31. Joy DC. Monte-Carlo modelling for electron microscopy and analysis. Oxford: Oxford University Press; 1995.
32. Huey BD, Lisjak D, Bonnell DA. Nanometer-scale variations in interface potential by scanning probe microscopy. J Am Ceram Soc 1999;82:1941-4.
33. Wander A, Schedin F, Steadman P, Norris A, McOrath R, Turner TS, et al. Stability of polar oxide surfaces. Phys Rev Lett 2001;86:3811-4.
34. Ernst F, Mulvihill ML, Kienzle O, Ruble M. Preferred grain orientation relationships in sintered perovskite ceramics. J Am Ceram Soc 2001;84:1885-90.
35. Seaton J, Leach C. Local property measurement in PTC thermistors. Acta Mater [in press].