Hydrogen plasma enhancement of boron activation in shallow junctions

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4052-4054

  Vengurlekar, A ^a   Ashok, S ^a   Kalnas, C E ^b   Theodore, N D ^c  

^a The Pennsylvania State University   (United States)

^b Solid State Measurements Inc   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC HYDROGEN; ELECTRICAL ACTIVATION;

HYDROGEN; LOW TEMPERATURE EFFECTS; MICROELECTRONICS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON; SILICON; SUPERSATURATION;

SEMICONDUCTOR JUNCTIONS;

EID: 10044259900     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1811394     Document Type: Article

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