Hydrogen effect on enhancement of defect reactions in semiconductors: Example for silicon and vacancy defects

International Journal of Hydrogen Energy

Volumn 26, Issue 5, 2001, Pages 521-526

  Nazarov, A N ^a   Pinchuk, V M ^b   Yanchuk, T V ^b   Lysenko, V S ^e   Vovk, Ya N ^a   Rangan, S ^c   Ashok, S ^c   Kudoyarova, V ^d   Terukov, E I ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b NATIONAL TECHNICAL UNIVERSITY OF UKRAINE   (Ukraine)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

^e NONE

Author keywords

Dopant; Silicon; Vacancy

Indexed keywords

ARSENIC; BORON; CRYSTAL LATTICES; HYDROGEN; HYDROGENATION; PHOSPHORUS; POINT DEFECTS; QUANTUM THEORY; SEMICONDUCTOR DOPING; STRESSES;

INTERSTITIALS; VACANCIES;

SEMICONDUCTING SILICON;

EID: 0035338888     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0360-3199(00)00090-2     Document Type: Article

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