Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices

Thin Solid Films

Volumn 469-470, Issue SPEC. ISS., 2004, Pages 444-449

  Östling, Mikael ^a   Koo, Sang Mo ^b   Zetterling, Carl Mikael ^a   Khartsev, Sergey ^a   Grishin, Alex ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Ferroelectric thin films; Nonvolatile memory and sensor devices; Silicon carbide

Indexed keywords

FIELD EFFECT SEMICONDUCTOR DEVICES; LIGHT POLARIZATION; NONVOLATILE STORAGE; PROBLEM SOLVING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SILICON SENSORS; THERMAL EFFECTS;

POWER SWITCHING; SENSOR DEVICES; SILICON CARBIDE (SIC) DEVICES; STABLE STATES;

FERROELECTRIC THIN FILMS;

EID: 10044254379     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.09.030     Document Type: Article

References (21)

1. S.Y. Wu, IEEE Trans. Electron Devices ED-21 (1974) 499.
2. J.F. Scott, C.A.F. Araujo, Science 246 (1989) 1400.
3. S.-M. Koo, L.R. Zheng, K.V. Rao, J. Mater. Res. 14 (1999) 3833.
4. E. Tokumitsu, O. Fujii, H. Ishiwara, Appl. Phys. Lett. 75 (1999) 575.
5. T. Li, S.T. Hsu, B.D. Ulrich, L. Stecker, D.R. Evans, J.J. Lee, IEEE Electron Device Lett. 23 (2002) 339.
6. C.-M. Zetterling, Process Technologies for Silicon Carbide Devices, EMIS Process Series, INSPEC, IEE, London, UK, 2002.
7. B.J. Baliga, J. Appl. Phys. 53 (1982) 1759.
8. B.J. Baliga, IEEE Electron Device Lett. 455 (1989) 10.
9. E.O. Johnson, RCA Rev. 26 (1963) 163.
10. R.W. Keyes, Proc. IEEE 60 (1972) 225.
11. K. Shenai, R.S. Scott, B.J. Baliga, IEEE Trans. Electron Devices 36 (1989) 1811.
12. J.A. Cooper, M.R. Melloch, R. Singh, A. Agarwal, J.W. Palmour, IEEE Trans. Electron Devices 49 (2002) 658.
13. G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, J.W. Palmour, IEEE Electron Device Lett. 22 (2001) 176.
14. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, Y. Sugawara, IEEE Electron Device Lett. 20 (1999) 611.
15. C.M. Zetterling, M. Östling, H. Yano, T. Kimoto, H. Matsunami, K. Linthicum, R.F. Davis, Mat. Sci. Forum 338 (2000) 1315.
16. J.C. Zolper, Solid-State Electron. 42 (1998) 2153.
17. S.-M. Koo, C.-M. Zetterling, M. Östling, S.I. Khartsev, A.M. Grishin, IEEE International Electron Devices Meeting 2003, Washington, DC, Dec. 8-10, 2003, IEDM 03 Tech. Digest, 2003, p. 575.
18. S.-M. Koo, S.I. Khartsev, C.-M. Zetterling, A.M. Grishin, M. Östling, Appl. Phys. Lett. 81 (2002) 895.
19. C.J. Scozzie, F.B. McLean, J.M. McGarrity, J. Appl. Phys. 81 (1997) 7687.
20. S.-M. Koo, S.I. Khartsev, C.-M. Zetterling, A.M. Grishin, M. Östling, Appl. Phys. Lett. 83 (2003) 3975.
21. C.H. Seager, D.C. McIntyre, W.L. Warren, B.A. Turtle, Appl. Phys. Lett. 68 (1996) 2660.