Investigation of a distribution function suitable for acceptors in SiC

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4213-4218

  Matsuura, Hideharu ^a  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRICAL ENGINEERING; FERMI LEVEL; GROUND STATE; IONIZATION; MOS DEVICES; POISSON EQUATION; SCHOTTKY BARRIER DIODES;

CONDUCTION BANDS; DISTRIBUTED FUNCTIONS; DOPANT DENSITY; FERMI-DIRAC (FD) DISTRIBUTION FUNCTIONS;

SILICON CARBIDE;

EID: 2342503761     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1655683     Document Type: Article

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