New method to characterize mesoscopic range and very small strain with using multi-wave X-ray diffraction

Surface Science

Volumn 550, Issue 1-3, 2004, Pages 93-105

  Yashiro, Wataru ^a,b   Sumitani, Kazushi ^c   Takahashi, Toshio ^c   Yoda, Yoshitaka ^d   Miki, Kazushi ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Crystalline amorphous interfaces; Insulating films; Oxidation; Silicon; Silicon oxides; Surface relaxation and reconstruction; Surface stress; X ray scattering, diffraction, and reflection

Indexed keywords

AMORPHOUS MATERIALS; APPROXIMATION THEORY; CRYSTAL STRUCTURE; HETEROJUNCTIONS; LINEAR EQUATIONS; MODULATION; OXIDATION; REFLECTION; RELAXATION PROCESSES; SILICON WAFERS; STRAIN; SURFACE WAVES; X RAY DIFFRACTION; X RAY SCATTERING;

CRYSTAL-TRUNCATION-ROD (CTR); CRYSTALLINE-AMORPHOUS INTERFACES; INSULATING FILMS; MESOSCOPIC RANGE STRAIN FIELDS; SILICON OXIDES; SURFACE RELAXATION AND RECONSTRUCTION; SURFACE STRESS; X-RAY REFLECTION; X-RAY STANDING WAVE (XSW);

SURFACE PHENOMENA;

EID: 0942278651     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.12.025     Document Type: Article

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