Semiconductor quantum dots

IEEE Circuits and Devices Magazine

Volumn 19, Issue 6, 2003, Pages 24-29

  Reithmaier, Johann Peter ^a   Forchel, Alfred ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISTRIBUTED FEEDBACK LASERS; LOCAL AREA NETWORKS; METALLORGANIC VAPOR PHASE EPITAXY; METROPOLITAN AREA NETWORKS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; STIMULATED EMISSION;

ENERGY SPECTRUM; SEMICONDUCTOR OPTICAL AMPLIFIERS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0842343698     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2003.1263457     Document Type: Article

References (17)

1. Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett., vol. 40, no. 11, pp. 939-949, 1982.
2. M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and the threshold of three dimensional quantum-box lasers," IEEE J. Quantum Electron., vol. 22, pp. 1915-1921, Sept. 1986.
3. V.M. Ustinov, A.Y. Egorov, A.R. Kovsh, A.E. Zhukov, M.V. Maximov, A.F. Tsatsulinikov, N.Y. Gordeev, S.V. Zaitsev, Y.M. Shernyakov, N.A. Bert, P.S. Kop'ev, Z.I. Alferov, N.N. Ledentsov, J. Boehrer, D. Bimberg, A.O. Kosogov, P. Werner, and U. Goesele, "Low-threshold injection lasers based on vertically coupled quantum dots," J. Cryst. Growth, vol. 175, p. 689, 1997.
4. D.L. Huffaker, G. Park, Z. Zhou, O.B. Shchekin, and D.G. Deppe, "1.3 μm room-temperature GaAs-based quantum dot laser," Appl. Phys. Lett., vol. 73, no. 18, pp. 2564-2566, 1998.
5. L.F. Lester, A. Stintz, H. Li, T.C. Newell, E.A. Pease, B.A. Fuchs, and K.J. Malloy, "Optical characteristics of 1.24 μm InAs quantum dot laser diodes," IEEE Phot. Technol. Lett., vol. 11, pp. 931-933 Aug. 1999.
6. G.T. Liu, A. Stintz, H. Li, K.J. Malloy, and L.F. Lester, "Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well," Electron. Lett., vol. 35, no. 14, pp. 1163-1165, Jul. 8, 1999.
7. G. Park, O.B. Shchekin, D.L. Huffaker, and D.G. Deppe, "InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature," Electron. Lett., vol. 36, no. 15, pp. 1283-1284, Jul. 20, 2000.
8. F. Klopf, J.P. Reithmaier, A. Forchel, "Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers," Appl. Phys. Lett., vol. 77, no. 10, pp. 1419-1421, 2000.
9. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, "1.3 μm CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots," IEEE J. Quant. Electron., vol. 36, pp. 472-478, Apr. 2000.
10. R. Krebs, F. Klopf, J.P. Reithmaier, A. Forchel, "High performance 1.3 μm quantum-dot lasers," Jpn. J. Appl. Phys., vol. 41, no. 2B, pp. 1158-1161, 2002.
11. T. Akiyama, N. Hatori, Y. Nakata, H. Ebe, and M. Sugawara, "Pattern-effect-free semiconductor optical amplifier with quantum-dot active layers," Physica Status Solidi B, vol. 238, no. 2, pp. 301-304l, 2003.
12. T. Akiyama, H. Kuwatsuka, T. Simoyama, Y. Nakata, K. Mukai, M. Sugawara, O. Wada, and H. Ishikawa, "Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices," IEEE J Quant. Electron., vol. 37, pp. 1057-1065, Aug. 2001.
13. G. Steinle, F. Mederer, M. Kicherer, R. Michalzik, G. Kristen, A.Y. Egorov, H. Riechert, H.D. Wolf, and K.J. Ebeling, "Data transmission up to 10 Gbit/s with 1.3 μm wavelength InGaAsN VCSELs," Electron. Lett. vol. 37, no. 10, pp. 632-634, May 10, 2001.
14. N.N. Ledentsov, D. Bimberg, V.M. Ustinov, Zh.I. Alferov, and J.A. Lott, "Self organized InGaAs quantum dots for advanced applications in optoelectronics," Jpn. J. Appl. Phys., vol. 41, no. 2B, pp. 949-952, 2002.
15. H. Saito, K. Nishi, and S. Sugou, "Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates," Appl. Phys. Lett. vol. 78, no. 3, pp. 267-269, 2001.
16. R.H. Wang, A. Stintz, P.M. Varangis, T.C. Newell, H. Li, K.J. Malloy, and L.F. Lester, "Room-temperature operation of InAs quantum-dash lasers on InP (001)," IEEE Phot. Technol. Lett. vol. 13, pp. 767-769, Aug. 2001.
17. R. Schwertberger, D. Gold, J.P. Reithmaier, and A. Forchel, "Long wavelength InP based quantum dot lasers," IEEE Phot. Technol. Lett., vol. 14, pp. 735-737, June 2002.