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Volumn 220, Issue 3, 2000, Pages 243-253

Transport effects in the sublimation growth of aluminum nitride

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLIZATION; HEAT CONVECTION; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SUBLIMATION; TRANSPORT PROPERTIES;

EID: 0034515111     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00841-1     Document Type: Article
Times cited : (66)

References (14)
  • 9
    • 0000626886 scopus 로고    scopus 로고
    • NIST-JANAF Thermochemical Tables, 4th edition
    • American Chemical Society and American Institute of Physics
    • M.W. Chase, NIST-JANAF Thermochemical Tables, 4th edition, American Chemical Society and American Institute of Physics, 1998, J. Phys. Chem. Ref. Data, Monograph No. 9.
    • (1998) J. Phys. Chem. Ref. Data, Monograph No. , vol.9
    • Chase, M.W.1
  • 14
    • 0001066781 scopus 로고
    • Bulk crystal growth by physical vapor transport
    • in: D.T.J. Hurle
    • E. Kaldis, M. Piechotka, Bulk crystal growth by physical vapor transport, in: D.T.J. Hurle, Handbook of Crystal Growth, 2 (1994) 615.
    • (1994) Handbook of Crystal Growth , vol.2 , pp. 615
    • Kaldis, E.1    Piechotka, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.