Poly-Si TFT Fabricated at 150°C Using ICP-CVD and Excimer Laser Annealing for Plastic Substrates

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 215-218

  Lee, Min Cheol ^a   Han, Sang Myeon ^a   Kang, Su Hynk ^a   Shin, Moon Young ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CRYSTAL STRUCTURE; EXCIMER LASERS; HYDROGEN; INDUCTIVELY COUPLED PLASMA; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SILICA; SURFACE REACTIONS;

EXCIMER LASER ANNEALING (ELA); PLASTIC SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 0842288276     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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