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Volumn , Issue , 2003, Pages 215-218
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Poly-Si TFT Fabricated at 150°C Using ICP-CVD and Excimer Laser Annealing for Plastic Substrates
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CARRIER MOBILITY;
CRYSTAL STRUCTURE;
EXCIMER LASERS;
HYDROGEN;
INDUCTIVELY COUPLED PLASMA;
INTERFACES (MATERIALS);
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
POLYSILICON;
SILICA;
SURFACE REACTIONS;
EXCIMER LASER ANNEALING (ELA);
PLASTIC SUBSTRATES;
THIN FILM TRANSISTORS;
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EID: 0842288276
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (21)
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References (10)
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