Effects of inductively coupled plasma oxidation on the properties of polycrystalline silicon films and thin film transistors

Applied Physics Letters

Volumn 74, Issue 18, 1999, Pages 2693-2695

  Choi, Yong Woo ^a   Park, Sang Won ^a   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; PARAMAGNETIC RESONANCE; PLASMAS; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

INDUCTIVELY COUPLED PLASMA (ICP) OXIDATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

THIN FILM TRANSISTORS;

EID: 0032614539     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123939     Document Type: Article

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