The effects of nitrogen plasma on reactive-ion etching induced damage in GaN

Journal of Applied Physics

Volumn 95, Issue 2, 2004, Pages 727-730

  Mouffak, Z ^a,b   Bensaoula, A ^a   Trombetta, L ^b  

^a University of Houston   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA CHEMISTRY; PLASMA DAMAGE;

CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; EVAPORATION; GALLIUM NITRIDE; HETEROJUNCTIONS; NITROGEN; OHMIC CONTACTS; PLASMA ETCHING; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; STOICHIOMETRY; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

INDUCTIVELY COUPLED PLASMA;

EID: 0742320693     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632552     Document Type: Article

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