Simulation of hole phonon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor

Journal of Applied Physics

Volumn 95, Issue 2, 2004, Pages 713-717

  Payet, Fabrice ^a   Cavassilas, Nicolas ^a   Autran, Jean Luc ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION; ELECTRIC FIELDS; HAMILTONIANS; INTERFACES (MATERIALS); LIGHT SCATTERING; MATHEMATICAL MODELS; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ALLOYS; STRAIN; SUBSTRATES; SURFACE ROUGHNESS;

CARRIER VELOCITY; PHONON SCATTERING;

MOSFET DEVICES;

EID: 0742268440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633346     Document Type: Article

References (12)

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