Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs

Solid-State Electronics

Volumn 46, Issue 4, 2002, Pages 559-566

  Cavassilas, Nicolas ^a   Aniel, Frédéric ^a   Fishman, Guy ^a   Adde, Robert ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Boltzmann transport equation; Full band structure of semiconductor; GaAs; High electric field; Impact ionization

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE;

BOLTZMANN TRANSPORT EQUATION;

SEMICONDUCTOR DEVICES;

EID: 0036533377     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00221-0     Document Type: Article

References (25)

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