Nondestructive defect characterization and engineering in contemporary silicon power devices

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 545-550

  Hazdra, P ^a   Vobecky J ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; IRRADIATION; LIFE CYCLE; SEMICONDUCTOR DIODES;

LIFETIME CONTROL METHODS; SILICON POWER DIODES;

SEMICONDUCTING SILICON;

EID: 0032646632     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.545     Document Type: Article

References (6)

1. N. Galster, M. Frecker, E. Caroll, J. Vobecký, P. Hazdra, Proc. PCIM INTER' 98 (1998), 69.
2. P. Hazdra, J. Rubeš, J. Vobecký, to be published.
3. K. Irmscher, H. Klose K. Maass, J. Phys.C17(1984),6317.
4. J.P. Biersack, L.G. Haggmark, Nucl. Instr. and Meth. 174(1980), 257.
5. F. Spurný, P. Hazdra, J Vobecký, Proc. ISPS'96(1996), 11.
6. P. Hazdra, V. Hašlar, J. Vobecký, Nucl. Instr. and Meth. B 96(1995), 104.