Radiation defect distribution in silicon irradiated with 600 keV electrons

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 201, Issue 3, 2003, Pages 513-519

  Hazdra, P ^a   Dorschner, H ^b  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b LEIBNIZ INSTITUTE OF POLYMER RESEARCH DRESDEN   (Germany)

Author keywords

Deep level transient spectroscopy; Electron irradiation; Lifetime control; Radiation defect profiles

Indexed keywords

ABSORPTION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON IRRADIATION; SILICON;

RADIATION DEFECT PROFILES;

RADIATION DAMAGE;

EID: 0037371685     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01817-7     Document Type: Article

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